| Issue |
J. Phys. IV France
Volume 09, Number PR10, December 1999
International Workshop on Electronic CrystalsECRYS-99 |
|
|---|---|---|
| Page(s) | Pr10-47 - Pr10-48 | |
| DOI | https://doi.org/10.1051/jp4:19991011 | |
International Workshop
on Electronic Crystals
ECRYS-99
J. Phys. IV France 09 (1999) Pr10-47-Pr10-48
DOI: 10.1051/jp4:19991011
1 Institute of Physics, P.O. Box 304, 10001 Zagreb, Croatia
2 Physikal Institut, Uni. Bayreuth, 95440 Bayreuth, Germany
3 Institute of Radioengineering and Electronics, Russian Academy of Sciences, Mokhovaya 11, 103907 Moscow, Russia
© EDP Sciences 1999
ECRYS-99
J. Phys. IV France 09 (1999) Pr10-47-Pr10-48
DOI: 10.1051/jp4:19991011
Complex dielectric response of the CDW ground state in o-TaS3
D. Staresinic1, K. Biljakovic1, W. Bruetting2, K. Hosseini2 and S. Zaitsev-Zotov31 Institute of Physics, P.O. Box 304, 10001 Zagreb, Croatia
2 Physikal Institut, Uni. Bayreuth, 95440 Bayreuth, Germany
3 Institute of Radioengineering and Electronics, Russian Academy of Sciences, Mokhovaya 11, 103907 Moscow, Russia
Abstract
We report the temperature evolution of the low-frequency (f<10 MHz) dielectric response of the CDW material
orthorombic TaS3 between 150 K and 10 K. There are two distinctive processes observed bellow and above 50 K that define
different ground states of CDW. The first one due to the weakly pinned elastic CDW freezes at about 50 K and a second one
due to the dynamics of topological defects of frozen CDW appears below. Similar change of regime is observed in linear
conductivity in the same temperature range. This second process we detect also in thermally stimulated discharge, an
alternative technique of low frequency dielectric measurement, which allows access to effective frequencies down to 0.1 mHz.
© EDP Sciences 1999