| Issue |
J. Phys. IV France
Volume 09, Number PR8, September 1999
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
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| Page(s) | Pr8-777 - Pr8-784 | |
| DOI | https://doi.org/10.1051/jp4:1999898 | |
J. Phys. IV France 09 (1999) Pr8-777-Pr8-784
DOI: 10.1051/jp4:1999898
RPECVD thin cadmium, copper and zinc sulphide films
Yu.M. Rumyantsev, N.I. Fainer, M.L. Kosinova, B.M. Ayupov and N.P. SysoevaInstitute of Inorganic Chemistry, SB RAS, Novosibirsk-90, Russia
Abstract
The thin cadmium, copper and zinc sulphide films were first synthesized by remote plasma enhance chemical vapor deposition at low pressure (10-3-10-1 Torr) and low temperatures (373-773 K). The volatile mixed ligand complex of cadmium diethyldithiocarbamate with 1,10-phenantroline Cd(S2CN(C2H5)2)2.C12H8N2 - (I), copper diethyldithiocarbamate complex Cu(S2CN(C2H5)2)2 - (II), mixture of cadmium diethyldithiocarbamate complex with 1,10-phenantroline Cd(S2CN(C2H5)2)2.C12H8N2 and heterometallic Cd(S2CN(C2H5)2)2Cul complex (III) with ready-made Cd-S-Cu fragments and mixture of cadmium/zinc (30%) diethyldithiocarbamate complex with 2, 2' bipyridyl Cd/Zn(S2CN(C2H5)2)2.C10H8N2 (IV) were used as single-source precursors. Helium was used both for selective plasma excitation of dithiocarbamate molecules and as carrier gas. The growth rates, refractive index, optical transmittance, crystalline structure and phase composition of cadmium, copper and zinc sulphide layers were investigated.
© EDP Sciences 1999