| Issue |
J. Phys. IV France
Volume 09, Number PR8, September 1999
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
|
|
|---|---|---|
| Page(s) | Pr8-689 - Pr8-695 | |
| DOI | https://doi.org/10.1051/jp4:1999887 | |
J. Phys. IV France 09 (1999) Pr8-689-Pr8-695
DOI: 10.1051/jp4:1999887
Growth of oxide buffer layers and YBCO films on various substrates by pulsed injection CVD
A. Abrutis1, V. Plausinaitiene1, A. Teiserskis1, V. Kubilius1, Z. Saltyte1, J.P. Sénateur2 and L. Dapkus31 Vilnius University, Department of General and Inorganic Chemistry, Naugarduko 24, 2006 Vilnius, Lithuania
2 Laboratoire des Matériaux et du Génie Physique, INPG-ENSPG, UMR 5628 du CNRS, BP. 46, 38402 Saint-Martin-d'Hères, France
3 Semiconductor Physics Institute, Gostauto 11, 2600 Vilnius, Lithuania
Abstract
Bilayers composed from a YSZ or CeO2 buffer layer and a YBCO film were in situ grown on monocrystalline sapphire, MgO, silicon, vicinally polished sapphire and MgO substrates by single source pulsed injection CVD. Zr, Ce, Y, Ba and Cu 2,2,6,6-tetramethyl-3,5-heptandionates dissolved in organic solvent were used for film deposition. CeO2/YBCO bilayers on sapphire were grown epitaxially and exhibited critical current densities up to 106 A/cm2 at 77 K. YSZ and CeO2 buffer layers on MgO substrates did not improved the properties of YBCO layers compared with YBCO films deposited directly on MgO surface ; however, interesting microstructural properties of these heterostructures were found. Homogeneous YSZ films were also deposited on large Si substrates (3 inches in diameter).
© EDP Sciences 1999