| Issue |
J. Phys. IV France
Volume 09, Number PR8, September 1999
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
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|---|---|---|
| Page(s) | Pr8-621 - Pr8-628 | |
| DOI | https://doi.org/10.1051/jp4:1999878 | |
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
J. Phys. IV France 09 (1999) Pr8-621-Pr8-628
DOI: 10.1051/jp4:1999878
1 Chemistry Department, Moscow State University, 119899 Moscow, Russia
2 IOPW, TU Braunschweig, Bienroder Weg 53, 38108 Braunschweig, Germany
3 National Center for HREM, TU Delft, Rotterdamseweg 137, AL Delft, The Netherlands
© EDP Sciences 1999
J. Phys. IV France 09 (1999) Pr8-621-Pr8-628
DOI: 10.1051/jp4:1999878
Phase relations in thin epitaxial films of complex oxides prepared by MOCVD
S.V. Samoylenkov1, O.Yu. Gorbenko1, I.E. Graboy1, A.R. Kaul1, O. Stadel2, G. Wahl2 and H.W. Zandbergen31 Chemistry Department, Moscow State University, 119899 Moscow, Russia
2 IOPW, TU Braunschweig, Bienroder Weg 53, 38108 Braunschweig, Germany
3 National Center for HREM, TU Delft, Rotterdamseweg 137, AL Delft, The Netherlands
Abstract
The composition and orientation of the phases nucleating on a single crystalline substrate during MOCVD of complex oxides are governed by thermodynamics, growth kinetics, the structures of the substrate material and growing compounds. We demonstrate the importance of the formation of coherent interfaces for the stabilization of otherwise non-equilibrium oxide phases. The systematic analysis of experimental results (e.g. HREM study of coherent R2O3 inclusions in RBa2Cu3O7 epitaxial films, epitaxial BaCu3O4 films on perovskite substrates of various orientations) shows that equilibrium relations in epitaxial thin films of complex oxides could remarkably differ from those of ceramics.
© EDP Sciences 1999