| Issue |
J. Phys. IV France
Volume 09, Number PR8, September 1999
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
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| Page(s) | Pr8-471 - Pr8-478 | |
| DOI | https://doi.org/10.1051/jp4:1999859 | |
J. Phys. IV France 09 (1999) Pr8-471-Pr8-478
DOI: 10.1051/jp4:1999859
MOCVD of ferroelectric BaMgF4 thin films
M. Ryazanov, I. Korsakov and N. KuzminaLaboratory of Coordination Chemistry, Inorganic Chemistry Department, Moscow State University, Leninskie Gory, 119899 Moscow V-234, Russia
Abstract
For the deposition of non-oxide ferroelectric fluoride BaMgF4 thin films, the single source MOCVD technique with a flash evaporation feeder was developed. To find suitable volatile precursors, a series of hexafluoroacetylacetonate barium and magnesium complexes was studied : Mg(hfa)2(H2O)2, Mg(hfa)2, [Ba(hfa)2]∞, Ba(hfa)2(tetraglyme), Ba(hfa)2(phen)2. In terms of the thermal behavior results, complexes Mg(hfa)2 and Ba(hfa)2(tetraglyme) were chosen as MOCVD precursors and used for deposition of BaMgF4 on MgO(100) single crystalline substrates. Effects of the deposition process parameters (reactor temperature, oxygen flow) on the composition and morphology of the films as well as on phase composition and preferred orientation were investigated.
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