| Issue |
J. Phys. IV France
Volume 09, Number PR8, September 1999
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
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|---|---|---|
| Page(s) | Pr8-381 - Pr8-386 | |
| DOI | https://doi.org/10.1051/jp4:1999847 | |
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
J. Phys. IV France 09 (1999) Pr8-381-Pr8-386
DOI: 10.1051/jp4:1999847
Department of Inorganic Chemistry, The Ångström Laboratory, Uppsala University, Box 538, 75121 Uppsala, Sweden
© EDP Sciences 1999
J. Phys. IV France 09 (1999) Pr8-381-Pr8-386
DOI: 10.1051/jp4:1999847
Epitaxial growth of TiO2 (rutile) thin films by halide CVD
M. Schuisky and A. HårstaDepartment of Inorganic Chemistry, The Ångström Laboratory, Uppsala University, Box 538, 75121 Uppsala, Sweden
Abstract
Thin films of TiO2 have been deposited on α-Al2O3 (0 1 2) substrates from TiI4 and O2 using low pressure chemical vapour deposition. The TiO2 films were iodine-free and both the anatase and the rutile phase TiO2 could be deposited. The rutile phase was found to grow with a strong [1 0 1] orientation at deposition temperatures down to 490 °C. The rocking curve FWHM value for the (1 0 1) reflection was as low as 0.43°. The in-plane orientational relationship between the rutile film and the substrate was determined by φ-scan measurements to be [0 1 0]rutile//[1 0 0]α-Al2O3 and [1 0 1-]rutile//[1- 2- 1]α-Al2O3.
© EDP Sciences 1999