Proceedings of the Twelfth European Conference on Chemical Vapour Deposition

J. Phys. IV France 09 (1999) Pr8-213-Pr8-219
DOI: 10.1051/jp4:1999826

Modelling of SiC sublimation growth process : Influence of experimental parameters on crystal shape

A. Pisch¹, E. Blanquet¹, M. Pons¹, C. Bernard¹, M. Anikin², J.M. Dedulle² and R. Madar<sup>2

1</sup>  Laboratoire de Thermodynamique et Physicochimie Métallurgiques, UMR 5614 du CNRS, INPG/UJF, Institut National Polytechnique de Grenoble, BP. 75, 38402 Saint-Martin-d'Hères, France
²  Laboratoire de Matériaux et de Génie Physique, UMR 5628 du CNRS, INPG, ENSPG, Institut National Polytechnique de Grenoble, BP. 46, 38402 Saint-Martin-d'Hères, France

Abstract
Different computational tools help to provide information on the sublimation growth of Sic single crystals by the modified-Lely method. Local thermodynamic equilibrium calculations coupled to heat and mass transfer can give valuable data on the growth rate and the shape of the growing crystal. In this contribution, we focus on the influence of the overall Ar pressure in the growth cavity on the growing crystal shape for two different cavity geometries (with and without a screen next to the seed crystal) having similar temperature distributions. The results of this modelling will be compared to the experiments.

© EDP Sciences 1999