| Issue |
J. Phys. IV France
Volume 08, Number PR3, June 1998
Proceedings of the 3rd European Workshop on Low Temperature ElectronicsWOLTE 3 |
|
|---|---|---|
| Page(s) | Pr3-171 - Pr3-174 | |
| DOI | https://doi.org/10.1051/jp4:1998337 | |
WOLTE 3
J. Phys. IV France 08 (1998) Pr3-171-Pr3-174
DOI: 10.1051/jp4:1998337
A cryogenic GaAs PHEMT/ferroelectric Ku-band tunable oscillator
R.R. Romanofsky1, F.W. Van Keuls2 and F.A. Miranda11 National Aeronautics and Space Administration, Lewis Research Center, Cleveland, Ohio 44135, U.S.A.
2 National Research Council, NASA Research Associate at Lewis Research Center
Abstract
A Ku-band tunable oscillator operated at and below 77 K is described. The oscillator is based on two separate technologies : a 0.25 µm GaAs pseudomorphic high electron mobility transistor (PHEMT) circuit optimized for cryogenic operation, and a gold micostrip ring resonator patterned on a thin ferroelectric (SrTiO3) film which was laser ablated onto a LaAlO3 substrate. A tuning range of up to 3% of the center frequency was achieved by applying dcbias between the ring resonator and ground plane. To the best of our knowledge, this is the first tunable oscillator based on a thin film ferroelectric structure demonstrated in the microwave frequency range. The design methodology of the oscillator and the performance characteristics of the tunable resonator are described.
© EDP Sciences 1998