| Issue |
J. Phys. IV France
Volume 08, Number PR3, June 1998
Proceedings of the 3rd European Workshop on Low Temperature ElectronicsWOLTE 3 |
|
|---|---|---|
| Page(s) | Pr3-21 - Pr3-24 | |
| DOI | https://doi.org/10.1051/jp4:1998305 | |
Proceedings of the 3rd European Workshop on Low Temperature Electronics
WOLTE 3
J. Phys. IV France 08 (1998) Pr3-21-Pr3-24
DOI: 10.1051/jp4:1998305
Departamento de Electrónica y Tecnología de Computadores, Universidad de Granada, Facultad de Ciencias, Avd. Fuentenueva s/n, 18071 Granada, Spain
© EDP Sciences 1998
WOLTE 3
J. Phys. IV France 08 (1998) Pr3-21-Pr3-24
DOI: 10.1051/jp4:1998305
I-V and small signal parameters modelling of ultrasubmicron MOSFETs including the significant electron-velocity overshoot effects, which are enhanced at low temperature
J.B. Roldán, F. Gámiz, J.A. López-Villanueva and J.E. CarcellerDepartamento de Electrónica y Tecnología de Computadores, Universidad de Granada, Facultad de Ciencias, Avd. Fuentenueva s/n, 18071 Granada, Spain
Abstract
We have developed a new analytical ultra-short channel MOSFET model for circuit simulation including velocity overshoot effects. We have used a previous physically based model as the starting point and added a new term in order to account for electron velocity overshoot effects. We have been able to reproduce experimental I-V curves and conductances of MOSFETs down to 0.07 µm channel lengths. We have paid more attention to the modelling of velocity overshoot effects at low temperature, where ballistic transport is more likely due to the reduced energy relaxation produced by phonons.
© EDP Sciences 1998