| Issue |
J. Phys. IV France
Volume 08, Number PR3, June 1998
Proceedings of the 3rd European Workshop on Low Temperature ElectronicsWOLTE 3 |
|
|---|---|---|
| Page(s) | Pr3-9 - Pr3-12 | |
| DOI | https://doi.org/10.1051/jp4:1998302 | |
Proceedings of the 3rd European Workshop on Low Temperature Electronics
WOLTE 3
J. Phys. IV France 08 (1998) Pr3-9-Pr3-12
DOI: 10.1051/jp4:1998302
Laboratoire de Physique des Composants à Semiconducteurs, UMR du CNRS, ENSERG, BP. 257, 38016 Grenoble, France
© EDP Sciences 1998
WOLTE 3
J. Phys. IV France 08 (1998) Pr3-9-Pr3-12
DOI: 10.1051/jp4:1998302
Reverse short channel effect in silicon MOSFETs operated at low temperature
B. Szelag, F. Balestra and G. GhibaudoLaboratoire de Physique des Composants à Semiconducteurs, UMR du CNRS, ENSERG, BP. 257, 38016 Grenoble, France
Abstract
The Reverse Short Channel Effect (RSCE) is a major issue for deep submicronic CMOS technologies. In this paper we show using low temperature experiment that RSCE arises from an excess doping concentration near source and drain as supported from both analytical modelling and 2D numerical simulation.
© EDP Sciences 1998