Issue
J. Phys. IV France
Volume 7, Number C2, Avril 1997
Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure
Page(s) C2-821 - C2-822
DOI https://doi.org/10.1051/jp4:1997247
Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure

J. Phys. IV France 7 (1997) C2-821-C2-822

DOI: 10.1051/jp4:1997247

Gallium Crystal Chemistry in Synthetic Goethites

F. Martin1, Ph. Ildefonse2, J.L. Hazemann3, P.E. Mathe4, Y. Noack4, O. Grauby5, D. Beziat1 and Ph. de Parseval1

1  Laboratoire de Minéralogie-Cristallographie, UMR 5523 du CNRS, Université Paul Sabatier, 39 allée Jules Guesde, 31000 Toulouse, France
2  LMCP, Université Paris VI, 4 place Jussieu, 75252 Paris cedex, France
3  Laboratoire de Cristallographie, CNRS, 25 avenue des Martyrs, BP. 166X, 38042 Grenoble, France, LGIT-IRIGM, Université Joseph Fourier, BP. 53, 38041 Grenoble cedex 9, France
4  CEREGE-LGE, Europôle Méditerranéenne de l'Arbois, 13545 Aix-en-Provence, France
5  CRMC2, CNRS 7251, Campus de Luminy, Case 913, 13288 Marseille, France


Abstract
The distribution of Ga and Al atoms within the octahedral sheets of synthetic goethites has been investigated by XRD and Ga K-edge XANES and EXAFS spectroscopies. XRD results indicate a solid solution between goethite (α-FeOOH) and GaGoe4 (40 mol% of Ga). The XANES data indicate the presence of 6Ga in the solid solution. The fitting procedures for EXAFS spectra show no evidence of preferential octahedral site substitutions for Ga.



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