| Issue |
J. Phys. IV France
Volume 7, Number C2, Avril 1997
Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure
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|---|---|---|
| Page(s) | C2-575 - C2-576 | |
| DOI | https://doi.org/10.1051/jp4/1997101 | |
Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure
J. Phys. IV France 7 (1997) C2-575-C2-576
DOI: 10.1051/jp4/1997101
1 ICMA, CSIC-Universidad de Zaragoza, Facultad de Ciencias, Pza. S. Francisco s.n., 50009 Zaragoza, Spain
2 ICMAT- CNR, Area della Ricerca di Roma, CP. 10, 00016 Monterotondo Stazione, Italy
3 LURE, Université de Paris Sud, 91405 Orsay cedex, France
4 Fondazione "Ugo Bordoni", Via B. Castiglione 59, 00142 Roma, Italy
© EDP Sciences 1997
J. Phys. IV France 7 (1997) C2-575-C2-576
DOI: 10.1051/jp4/1997101
Photoelectron Diffraction Investigation of Strained InGaAs Grown on (001) GaAs
M.G. Proietti1, S. Turchini2, J. Garcia1, M.C. Asensio3, C. Casado3, F. Martelli4 and T. Prosperi21 ICMA, CSIC-Universidad de Zaragoza, Facultad de Ciencias, Pza. S. Francisco s.n., 50009 Zaragoza, Spain
2 ICMAT- CNR, Area della Ricerca di Roma, CP. 10, 00016 Monterotondo Stazione, Italy
3 LURE, Université de Paris Sud, 91405 Orsay cedex, France
4 Fondazione "Ugo Bordoni", Via B. Castiglione 59, 00142 Roma, Italy
Abstract
We have performed Soft X-Ray Photoelectron Diffraction measurents, at the Ga3d, As3d and In4d core levels, to
study the effects of strain on InGaAs grown on (001) GaAs. Polar and azimuths] scans have been recorded and compared with
Single Scattering Cluster Calculations. A good agreement is obtained between theory and experiment indicating that the
lattice expands in the growth direction as predicted by the elastic theory.
© EDP Sciences 1997