Issue
J. Phys. IV France
Volume 7, Number C2, Avril 1997
Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure
Page(s) C2-1137 - C2-1138
DOI https://doi.org/10.1051/jp4:19972161
Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure

J. Phys. IV France 7 (1997) C2-1137-C2-1138

DOI: 10.1051/jp4:19972161

An XAS Study of the Semi-Conducting Sulfides M2S3 (M = As, Sb, Bi)

J.M. Charnock1, 2, K.E.R. England2, C.M.B. Henderson2, J.F.W. Mosselmans1 and R.A.D. Pattrick2

1  C.C.L.R.C. Daresbury Laboratory, Warrington WA4 4AD, UK
2  Department of Earth Sciences, University of Manchester, Manchester M13 9PL, UK


Abstract
XANES has been used to probe the low-lying vacant states in the Period 15 sulfide semi-conductors M2S3 (M = As, Sb, Bi). The As K- and L3-, Sb K- and L3-, and Bi L3- and L1-edges are related to the S K-edge XANES in terms of bands of mixed orbital character. In the K-edge spectra transitions from the 1s state to states of some p character can be seen in the region between 5 eV before the edge and 15 eV after it. The S spectra are alike showing the similar nature of the electronic structure of these compounds. The white line intensity decreases down the period showing the density of empty S 2p states at the Fermi level is also decreasing. The Period 15 spectra are related to theoretical band structure calculations for As2S3.



© EDP Sciences 1997