Development of Silicon Drift Detectors and Digital Filtering Electronics for X-Ray Spectroscopy

E. Moguiline; Ch. Gauthier; G. Goujon; J. Goulon; M.O. Lampert; P. Dressier; R. Henck

doi:doi:10.1051/jp4/1997010

Issue		J. Phys. IV France Volume 7, Number C2, Avril 1997 Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure


Page(s)		C2-339 - C2-340
DOI		https://doi.org/10.1051/jp4/1997010

Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure

J. Phys. IV France 7 (1997) C2-339-C2-340
DOI: 10.1051/jp4/1997010

Development of Silicon Drift Detectors and Digital Filtering Electronics for X-Ray Spectroscopy

E. Moguiline¹, Ch. Gauthier¹, G. Goujon¹, J. Goulon¹, M.O. Lampert², P. Dressier³ and R. Henck²

¹ ESRF, avenue des Martyrs, BP. 220, 38043 Grenoble cedex, France
² Eurysis Mesures, Parc des Tanneries, 1 Chemin de la Roseraie, 67380 Lingolsheim, France
³ Eurysis Mesures, Parc des Tanneries,. Chemin de la Roseraie, 67380 Lingolsheim France

Abstract
We report on the performances of energy resolved detectors and electronics developed for X-ray absorption spectroscopy studies in the fluorescence excitation mode. Large active area multianode silicon drift detectors have been designed and evaluated. A typical energy resolution of 170 eV FWHM has been measured at 5.98 keV for a 6 us triangular shaping time. The data acquisition is based on multichannel digital shaping amplifiers developed at the ESRF. Excellent energy resolutions can be achieved with reduced dead rimes in comparison with analog shapers. The high level of integration and the full software control is compatible with the implementation of large detector arrays.