| Issue |
J. Phys. IV France
Volume 7, Number C2, Avril 1997
Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure
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|---|---|---|
| Page(s) | C2-687 - C2-689 | |
| DOI | https://doi.org/10.1051/jp4:1997205 | |
Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure
J. Phys. IV France 7 (1997) C2-687-C2-689
DOI: 10.1051/jp4:1997205
1 National Institute of Standards and Technology, Gaithersburg, Maryland 20899, U.S.A.
2 Department of Physics, Brooklyn College, Brooklyn, New York 11210, U.S.A.
© EDP Sciences 1997
J. Phys. IV France 7 (1997) C2-687-C2-689
DOI: 10.1051/jp4:1997205
Bond Lengths and Elasticity in Strained-Layer Semiconductors
J.C. Woicik1, J.G. Pellegrino1 and K.E. Miyano21 National Institute of Standards and Technology, Gaithersburg, Maryland 20899, U.S.A.
2 Department of Physics, Brooklyn College, Brooklyn, New York 11210, U.S.A.
Abstract
The x-ray standing wave (XSW) and extended x-ray absorption fine structure (EXAFS) techniques have determined the strain and bond distortions in an InAs monolayer embedded in GaAs(001). A unifying picture of bond lengths and elasticity in strained-layer semiconductors is presented.
© EDP Sciences 1997