Issue
J. Phys. IV France
Volume 07, Number C1, Mars 1997
7th INTERNATIONAL CONFERENCE ON FERRITES
Page(s) C1-707 - C1-708
DOI https://doi.org/10.1051/jp4:19971287
7th INTERNATIONAL CONFERENCE ON FERRITES

J. Phys. IV France 07 (1997) C1-707-C1-708

DOI: 10.1051/jp4:19971287

In Situ Growth of Polycrystalline Bismuth-iron-Garnet Films on Quartz Glass Substrate

T. Okuda, A. Kudoh, S. Yoshihara, N. Adachi and H. Ohsato

Section of Inorganic Materials, Department of Materials Science and Engineering, Nagoya Institute of Technologv, Gokiso-cho, Showa-ku, Nagoya, 466, Japan


Abstract
Polycrystalline (Bi,Gd)3(Fe,Ga)5O12 garnet layer was prepared on a quartz glass substrate at 500°C by alternating reactive ion beam sputtering using two ceramic targets, Gd3Ga5O12 and 3Bi2O3-5Fe2O3. The lattice constant was 12.548Å. The layer was almost magnetically compensated and paramagnetic. On that layer, polycrystalline Bi3Fe5O12 garnet layer was epitaxially grown by reactive ion beam sputtering. Those two layers were successively deposited in the same apparatus.



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