| Issue |
J. Phys. IV France
Volume 05, Number C1, Janvier 1995
Europhysics Industrial Workshop EIW-12Industrial Applications of Positron Annihilation |
|
|---|---|---|
| Page(s) | C1-63 - C1-72 | |
| DOI | https://doi.org/10.1051/jp4:1995107 | |
Europhysics Industrial Workshop EIW-12
Industrial Applications of Positron Annihilation
J. Phys. IV France 05 (1995) C1-63-C1-72
DOI: 10.1051/jp4:1995107
1 Centre for Electronic Materials, UMIST, P.O. Box 88, Manchester, M60 1QD, U.K.
2 INSTN, Gif-sur-Yvette, Saclay, France
© EDP Sciences 1995
Industrial Applications of Positron Annihilation
J. Phys. IV France 05 (1995) C1-63-C1-72
DOI: 10.1051/jp4:1995107
Vacancies and Dominant Electrically Active Defects in Bulk Semi-Insulating GaAs
M.R. Brozel1 and C. Corbel21 Centre for Electronic Materials, UMIST, P.O. Box 88, Manchester, M60 1QD, U.K.
2 INSTN, Gif-sur-Yvette, Saclay, France
Abstract
Positron Annihilation techniques have been used to investigate two important defects that occur naturally in semi-insulating (SI) Gallium arsenide. The growth and assessment of SI GaAs and the application of PA to defect analysis of this important material are reported.
© EDP Sciences 1995