| Issue |
J. Phys. IV France
Volume 04, Number C9, Novembre 1994
Proceedings of the European Symposium on Frontiers in Science and Technology with Synchrotron Radiation
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| Page(s) | C9-217 - C9-220 | |
| DOI | https://doi.org/10.1051/jp4:1994939 | |
Proceedings of the European Symposium on Frontiers in Science and Technology with Synchrotron Radiation
J. Phys. IV France 04 (1994) C9-217-C9-220
DOI: 10.1051/jp4:1994939
1 Centre de Recherche sur les Mécanismes de la Croissance Cristalline - CNRS, Campus de Luminy, Case 913, 13288 Marseille cedex 09 and UFR Sciences de la Matière, Université de Provence, Marseille, France
2 On leave from the Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow distr. 142432, Russia
3 Department of Physics, Northern Illinois University, DeKalb, Illinois 60115-2854, U.S.A.
4 Commissariat à l'Energie Atomique, Service de Recherche sur les Surfaces et l'Irradiation de la Matière, Bât. 462, Centre d'Etudes de Saclay, 91191 Gif-sur-Yvette cedex, France
5 Centre de Recherche sur les Mécanismes de La Croissance Cristalline - CNRS, Campus de Luminy, Case 913, 13288 Marseille cedex 09 and UFR Sciences de la Matière, Université de Provence, Marseille, France
© EDP Sciences 1994
J. Phys. IV France 04 (1994) C9-217-C9-220
DOI: 10.1051/jp4:1994939
Giant band bending and interface formation of Cs/InAs(110) at room temperature
V.Yu. Aristov1, 2, P .S. Mangat3, P. Soukiassian4 and G. Le Lay51 Centre de Recherche sur les Mécanismes de la Croissance Cristalline - CNRS, Campus de Luminy, Case 913, 13288 Marseille cedex 09 and UFR Sciences de la Matière, Université de Provence, Marseille, France
2 On leave from the Institute of Solid State Physics, Russian Academy of Sciences, Chernogolovka, Moscow distr. 142432, Russia
3 Department of Physics, Northern Illinois University, DeKalb, Illinois 60115-2854, U.S.A.
4 Commissariat à l'Energie Atomique, Service de Recherche sur les Surfaces et l'Irradiation de la Matière, Bât. 462, Centre d'Etudes de Saclay, 91191 Gif-sur-Yvette cedex, France
5 Centre de Recherche sur les Mécanismes de La Croissance Cristalline - CNRS, Campus de Luminy, Case 913, 13288 Marseille cedex 09 and UFR Sciences de la Matière, Université de Provence, Marseille, France
Abstract
We show by synchrotron radiation core level photoemission spectroscopy that minute amounts of Cs induce at room temperature a giant jump of the Fermi level into the conduction band when deposited on well-cleaved InAs(110) surfaces. This stage corresponds to a single Cs adsorption site. When more Cs is added a new adsorption site appears while correlatively the band bending gradually decreases. The complete interface formation (electronic structure, chemistry) is followed up to saturation at one monolayer and analyzed in terms of the present models of Schottky barrier formation.
© EDP Sciences 1994