0.85 and 1.54 µm emissions of CaF2:Er3+ layers grown by molecular beam epitaxy

E. DARAN; R. LEGROS; A. MUÑOS-YAGÜE; C. FONTAINE; L.E. BAUSÁ

doi:doi:10.1051/jp4:1994495

Issue		J. Phys. IV France Volume 04, Number C4, Avril 1994 3rd International Conference Laser M2P


Page(s)		C4-397 - C4-401
DOI		https://doi.org/10.1051/jp4:1994495

3rd International Conference Laser M2P

J. Phys. IV France 04 (1994) C4-397-C4-401
DOI: 10.1051/jp4:1994495

0.85 and 1.54 µm emissions of CaF₂:Er³⁺ layers grown by molecular beam epitaxy

E. DARAN¹, R. LEGROS¹, A. MUÑOS-YAGÜE¹, C. FONTAINE¹ and L.E. BAUSÁ²

¹ Laboratoire d'Automatique et d'Analyse des Systèmes du CNRS, 7 Av. Colonel Roche, 31077 Toulouse cedex, France
² Departamento de Fisica de Materiales C-IV, Universidad Autonoma de Madrid Cantoblanco, 28049 Madrid, Spain

Abstract
Molecular beam epitaxy of CaF₂ monocrystalline layers Er³⁺ doped up to a concentration of 50 mol% is demonstrated on CaF₂ substrates. Separated effusion cells containing CaF₂ and ErF₃ have been used. The photoluminescence spectra of these thin layers exhibit emissions from centers which were found to correspond to those already reported for CaF₂ : Er³⁺ bulk crystals. The influence of growth temperature and Er concentration on the spectroscopic properties of these layers was investigated. The 1.54 µm emission of interest was shown to behave as aggregate centers, and the integrated luminescence was only quenched for concentrations higher than 35 mol%. The trends observed evidence that molecular beam epitaxy is a powerful technique for growing thin Er-doped fluoride layers.