| Issue |
J. Phys. IV France
Volume 04, Number C3, Février 1994
36ème Colloque de Métallurgie de l'INSTNCHANGEMENTS DE PHASES ET MICROSTRUCTURES |
|
|---|---|---|
| Page(s) | C3-47 - C3-56 | |
| DOI | https://doi.org/10.1051/jp4:1994306 | |
36ème Colloque de Métallurgie de l'INSTN
CHANGEMENTS DE PHASES ET MICROSTRUCTURES
J. Phys. IV France 04 (1994) C3-47-C3-56
DOI: 10.1051/jp4:1994306
1 Laboratoire de Minéralogie-Cristallographie de Paris (LMCP), associé au CNRS, Universités Paris VI et Paris VII, 4 Place Jussieu, 75252 Paris cedex 05, France
2 Groupe de Physique des Solides (GPS), associé au CNRS, Universités Paris VI et Paris VII, 4 Place Jussieu, 75252 Paris cedex 05, France
© EDP Sciences 1994
CHANGEMENTS DE PHASES ET MICROSTRUCTURES
J. Phys. IV France 04 (1994) C3-47-C3-56
DOI: 10.1051/jp4:1994306
CdSxSe1-x nanocrystals grown from solid solution in silicate glass. Structural and interfacial aspects. High resolution transmission electron microscopy and optical absorption spectroscopy
M. GANDAIS1, M. ALLAIS1, Y. ZHENG1 and M. CHAMARRO21 Laboratoire de Minéralogie-Cristallographie de Paris (LMCP), associé au CNRS, Universités Paris VI et Paris VII, 4 Place Jussieu, 75252 Paris cedex 05, France
2 Groupe de Physique des Solides (GPS), associé au CNRS, Universités Paris VI et Paris VII, 4 Place Jussieu, 75252 Paris cedex 05, France
Abstract
CdS0.4Se0.6 nanocrystals have been formed through nucleation and growth processes during heat treatments at different temperatures (T = 600, 675 and 700°C) and annealing times (t = 1 hour to 8 days). A regime of nucleation and growth seems to occur at T = 600°C. The growth process is dominant at T = 675 and 700°C. The average size of the semiconductor particles ranges between 2 and 15 nm according to the temperature and annealing time. Structural and interfacial aspects of the particles at early stages of the growth are presented here.
© EDP Sciences 1994