In-situ scanning tunneling microscopy of the semiconductor-electrolyte interface

Abstract
The great reactivity of semiconductor surfaces and the easy formation of oxide layers make in-situ STM imaging of the semiconductors/electrolyte interface difficult at a high resolution. Additionally, STM imaging of such interfaces requires some care as far tunneling conditions are concerned. The paper analyses this question with the system Si/NaOH to illustrate the latest advances concerning in-situ imaging of the semiconductor electrodes. The etching of the (111) face has been studied at an atomic level over a wide range of potentials and the effect of species added into the solution (to modify the dissolution reaction) has been also investigated.