| Issue |
J. Phys. IV France
Volume 03, Number C8, Décembre 1993
IX International Conference on Small Angle Scattering
|
|
|---|---|---|
| Page(s) | C8-411 - C8-417 | |
| DOI | https://doi.org/10.1051/jp4:1993885 | |
IX International Conference on Small Angle Scattering
J. Phys. IV France 03 (1993) C8-411-C8-417
DOI: 10.1051/jp4:1993885
1 IBM, East Fishkill, EM1, Route 52, Hopewell Junction, NY 12533, U.S.A
2 Department of Materials Science and Engineering, McCormick School of Engineering and Applied Science, Northwestern University, Evanston, IL 60208, U.S.A.
3 Department of Materials Science and Engineering, McCormick School of Engineering and Applied Science, Northwestern University, Evanston, IL 60208, U.S.A.
© EDP Sciences 1993
J. Phys. IV France 03 (1993) C8-411-C8-417
DOI: 10.1051/jp4:1993885
GISAXS - Glancing incidence small angle X-ray scattering
J.R. LEVINE PARRILL1, P. GEORGOPOULOS2, Y.-W. CHUNG2 and J.B. COHEN31 IBM, East Fishkill, EM1, Route 52, Hopewell Junction, NY 12533, U.S.A
2 Department of Materials Science and Engineering, McCormick School of Engineering and Applied Science, Northwestern University, Evanston, IL 60208, U.S.A.
3 Department of Materials Science and Engineering, McCormick School of Engineering and Applied Science, Northwestern University, Evanston, IL 60208, U.S.A.
Abstract
In this method, the incident beam is totally externally reflected from a surface or substrate, followed by small-angle scattering of the refracted (evanescent) beam by the surface region. As one example, GISAXS can provide size information on islands associated with film growth. The technique is described, along with examples from studies of Au on glass, and InAs on silicon. In contrast to TEM this technique is nondestructive, can be done in situ, provides excellent sampling, does not necessarily require synchrotron radiation, and is not limited to thin or conducting substrates.
© EDP Sciences 1993