| Issue |
J. Phys. IV France
Volume 03, Number C8, Décembre 1993
IX International Conference on Small Angle Scattering
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|---|---|---|
| Page(s) | C8-373 - C8-376 | |
| DOI | https://doi.org/10.1051/jp4:1993877 | |
J. Phys. IV France 03 (1993) C8-373-C8-376
DOI: 10.1051/jp4:1993877
SAXS study of nucleation and growth of CdTe1-xSx semiconductor nanocrystals in borosilicate glass
A.F. CRAIEVICH1, O.L. ALVES2 and L.C. BARBOSA31 Laboratório Nacional de Luz Síncrotron/CNPq, Cx. Postal 6192, 13081-970 Campinas, SP, Brasil
2 Instituto de Química/UNICAMI: Cx. Postal 6154, 13081-970 Campinas, SP, Brasil
3 Instituto de Física/UNICAMP, Cx. Postal 6165, 13081-970 Campinas, SP, Brasil
Abstract
Previous investigations demonstrated that borosilicate glasses containing CdTeS nanocrystals exhibit quantum confinement effects. In this paper nucleation and growth of CdTe1-xSx (x=0, 0.40 and 0.70) spheroidal nanocrystals (with radii of a few nanometers) were studied during isothermal annealing at 580 C using the SAXS technique. The time evolutions of the averages of nanocrystal radii and width of the size distribution depend on the crystal stoichiometry. Smaller crystals are formed when sulfur content is lower. The rate of growth increases with sulfur content. The geometrical standard deviation of the radii of ternary crystals exhibits a minimum at annealing times of 15-20 min. These results provide useful hints which can help to obtain glass-CdTeS nanocrystal composites having a controlled average crystal size and a narrow size distribution.
© EDP Sciences 1993