| Issue |
Le Journal de Physique IV
Volume 03, Number C5, Octobre 1993
Third International Conference on Optics of Excitons in Confined
|
|
|---|---|---|
| Page(s) | C5-115 - C5-118 | |
| DOI | https://doi.org/10.1051/jp4:1993520 | |
Third International Conference on Optics of Excitons in Confined
Le Journal de Physique IV 03 (1993) C5-115-C5-118
DOI: 10.1051/jp4:1993520
1 4. Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, 70550 Stuttgart 80, Germany
2 Minsk Radioengineering Institut, Microelectronics Department, 6 P. Brovki Str., 220600, Republic Byelarus (C.I.S.)
3 DRA Malvern, St. Andrews Rd, Malvern, Worcs, WR14 3PS, G.B.
© EDP Sciences 1993
Le Journal de Physique IV 03 (1993) C5-115-C5-118
DOI: 10.1051/jp4:1993520
Optical properties of GaAs/AlGaAs quantum dots realized by implantation induced intermixing
F.E. PRINS1, F. ADLER1, G. LEHR1, S.Yu. NIKITIN2, H. SCHWEIZER1 and G.W. SMITH31 4. Physikalisches Institut, Universität Stuttgart, Pfaffenwaldring 57, 70550 Stuttgart 80, Germany
2 Minsk Radioengineering Institut, Microelectronics Department, 6 P. Brovki Str., 220600, Republic Byelarus (C.I.S.)
3 DRA Malvern, St. Andrews Rd, Malvern, Worcs, WR14 3PS, G.B.
Abstract
GaAs/AlGaAs quantum dots with diameter down to 70 nm have been realized by implantation induced intermixing. Photoluminescence studies demonstrate a high optical quality. From the systematic small blue shift of the dot luminescence with dot diameter it is shown that the dots reveal a steep radial potential and that the blue shift is caused by quantization. The increase of relative quantum efficiency of the dots with decreasing diameter can be explained by a model which takes the graded shape of the potential and the carrier capture from the barrier into account. Time-resolved measurement yield short carrier lifetimes in the dots. With decreasing dot diameter an increasing decay time and a slowed carrier cooling is observed.
© EDP Sciences 1993