| Issue |
J. Phys. IV France
Volume 03, Number C2, Juillet 1993
International Workshop on Electronic CrystalsECRYS - 93 |
|
|---|---|---|
| Page(s) | C2-277 - C2-280 | |
| DOI | https://doi.org/10.1051/jp4:1993256 | |
ECRYS - 93
J. Phys. IV France 03 (1993) C2-277-C2-280
DOI: 10.1051/jp4:1993256
Electrical properties of Ba1-xBixNiS2 (0 ≤ x ≤ 0.1)
H. KURIYAKI, K. TOKUNAGA, S. NISHIOKA and K. HIRAKAWADepartment of Electronics, Faculty of Engineering, Kyushu University 36, Hakozaki, Higashi-ku, Fukuoka 812, Japan
Abstract
The compounds BaNiS2 and Ba1-xBixNiS2 (x = 0.03, 0.07, 0.1) were prepared and their electrical resistivity, Seebeck coefficient, Hall coefficient and magnetic susceptibility were measured in the temperature range from 4.2 K to 280 K. BaNiS2 shows metallic behavior with a high anisotropy in resistivity, reflecting the layer structure, and Pauli paramagnetism with a weak temperature dependence. The Seebeck coefficient of BaNiS2 has a positive broad peak at about 200 K. Substituting of Bi for Ba site the majority charge-carrier changes from hole to electron. It is also noticed that the resistivity on the sample with x = 0.07 shows a peculiar step-like change around 220 K, corresponding to the temperature at which the Seebeck coefficient has an abnormal behavior.
© EDP Sciences 1993