| Issue |
J. Phys. IV France
Volume 03, Number C2, Juillet 1993
International Workshop on Electronic CrystalsECRYS - 93 |
|
|---|---|---|
| Page(s) | C2-175 - C2-178 | |
| DOI | https://doi.org/10.1051/jp4:1993235 | |
ECRYS - 93
J. Phys. IV France 03 (1993) C2-175-C2-178
DOI: 10.1051/jp4:1993235
Spatial distribution of charge-density-wave excitations due to current conversion near contacts
F.Ya. NAD'1, M.E. ITKIS2, P. MONCEAU3 and M. RENARD31 Institute of Radioengineering [MATH] Electronics, Russian Academy of Sciences, 103907 Moscow, Russia
2 Institute of Radioengineering & Electronics, Russian Academy of Sciences, 103907 Moscow, Russia
3 CRTBT, Laboratoire associé a l'UJF, BP 166, 38042 Grenoble cedex 9, France
Abstract
The non uniform spatial distribution of the electric field E along the quasi-one-dimensional conductor (o-TaS3) has been studied in the low-temperature range (T < 50 K) for a d.c. voltage V applied between current terminals less than the threshold value VT. We have found a strong increase of E near negative terminal with respect to its value in the middle of the sample, on the contrary E is reduced near the positive terminal. Such distribution of E is supposed to be related to the formation of two Schottky barriers at the metal-Peierls conductor contacts. With increasing V, both the size of non-uniform E region and appropriate band bending are enlarged. We suggest that these effects are related to space rearrangement of CDW deformation (solitons and dislocations) which also exist in CDW at V < VT. In the range V > VT the electric field increases near both contacts and spatial distribution of E becomes more symmetrical.
© EDP Sciences 1993