Journal de Physique IV

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MOCVD grown InGaP/GaAs camel-like field-effect transistor for high-breakdown and high-temperature operations

W.-C. Liu, K.-H. Yu, K.-W. Lin, K.-P. Lin, C.-H. Yen, C.-C. Cheng, C.-K. Wang and H.-M. Chuang

J. Phys. IV France, 11 PR3 (2001) Pr3-951-Pr3-955

DOI: 10.1051/jp4:20013119

W.-C. Liu

K.-H. Yu

K.-W. Lin

K.-P. Lin

C.-H. Yen

C.-C. Cheng

C.-K. Wang

H.-M. Chuang

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Copyright / Publiée par : EDP Sciences