Journal de Physique IV

Modeling of silicon epitaxial growth with SiHCl₃ in a CVD barrel reactor at atmospheric pressure

E. de Paola, P. Duverneuil, A. Langlais and M. Nguyen

J. Phys. IV France, 09 PR8 (1999) Pr8-221-Pr8-228

DOI: 10.1051/jp4:1999827

E. de Paola

P. Duverneuil

A. Langlais

M. Nguyen

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