Si1-x Gex structures fabricated by focused ion beam implantation Th. Ganetsos, D. Tsamakis, D. Panknin, G. L.R. Mair, J. Teichert, L. Bischoff et C. AidinisJ. Phys. IV France, 08 PR3 (1998) Pr3-109-Pr3-112DOI: https://doi.org/10.1051/jp4:1998325
