| Numéro |
J. Phys. IV France
Volume 08, Numéro PR3, June 1998
Proceedings of the 3rd European Workshop on Low Temperature ElectronicsWOLTE 3 |
|
|---|---|---|
| Page(s) | Pr3-109 - Pr3-112 | |
| DOI | https://doi.org/10.1051/jp4:1998325 | |
Proceedings of the 3rd European Workshop on Low Temperature Electronics
WOLTE 3
J. Phys. IV France 08 (1998) Pr3-109-Pr3-112
DOI: 10.1051/jp4:1998325
1 University of Athens, Physics Department, Panepistimiopolis GR 15784, Greece
2 Department of Electrical Engineering, Division of Electroscience NTUA, Heroon Polytechniou 9, Zografou 15773 Athens, Greece
3 Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, P.O. Box 510119, 01314 Dresden, Germany
© EDP Sciences 1998
WOLTE 3
J. Phys. IV France 08 (1998) Pr3-109-Pr3-112
DOI: 10.1051/jp4:1998325
Si1-x Gex structures fabricated by focused ion beam implantation
Th. Ganetsos1, D. Tsamakis2, D. Panknin3, G.L.R. Mair1, J. Teichert3, L. Bischoff3 and C. Aidinis11 University of Athens, Physics Department, Panepistimiopolis GR 15784, Greece
2 Department of Electrical Engineering, Division of Electroscience NTUA, Heroon Polytechniou 9, Zografou 15773 Athens, Greece
3 Forschungszentrum Rossendorf, Institute of Ion Beam Physics and Materials Research, P.O. Box 510119, 01314 Dresden, Germany
Abstract
In this work we present a study of the spreading resistance for Si1-xGex structures fabricated by F.I.B - L.M.I.S. technique. Maskless ion implantation using a Focused Ion Beam has the advantages of high resolution, the possibility to vary dose, energy and pattern design within a chip or within a structure.
© EDP Sciences 1998