Article cité par

La fonctionnalité Article cité par… liste les citations d'un article. Ces citations proviennent de la base de données des articles de EDP Sciences, ainsi que des bases de données d'autres éditeurs participant au programme CrossRef Cited-by Linking Program. Vous pouvez définir une alerte courriel pour être prévenu de la parution d'un nouvel article citant " cet article (voir sur la page du résumé de l'article le menu à droite).

Article cité :

Variable temperature probing of minority carrier transport and optical properties in p-Ga2O3

Sushrut Modak, Leonid Chernyak, Alfons Schulte, et al.
APL Materials 10 (3) (2022)
https://doi.org/10.1063/5.0086449

Electron beam probing of non-equilibrium carrier dynamics in 18 MeV alpha particle- and 10 MeV proton-irradiated Si-doped β -Ga2O3 Schottky rectifiers

Sushrut Modak, Leonid Chernyak, Alfons Schulte, et al.
Applied Physics Letters 118 (20) (2021)
https://doi.org/10.1063/5.0052601

Effect of Electron Injection on Minority Carrier Transport in 10 MeV Proton Irradiated β-Ga2O3 Schottky Rectifiers

Sushrut Modak, Leonid Chernyak, Sergey Khodorov, et al.
ECS Journal of Solid State Science and Technology 9 (4) 045018 (2020)
https://doi.org/10.1149/2162-8777/ab902b

Impact of electron injection on carrier transport and recombination in unintentionally doped GaN

Sushrut Modak, Leonid Chernyak, Minghan Xian, et al.
Journal of Applied Physics 128 (8) (2020)
https://doi.org/10.1063/5.0017742

Impact of Electron Injection and Temperature on Minority Carrier Transport in Alpha-Irradiated ß-Ga2O3 Schottky Rectifiers

Sushrut Modak, Leonid Chernyak, Sergey Khodorov, et al.
ECS Journal of Solid State Science and Technology 8 (7) Q3050 (2019)
https://doi.org/10.1149/2.0101907jss

Effect of 1.5 MeV electron irradiation on β-Ga2O3 carrier lifetime and diffusion length

Jonathan Lee, Elena Flitsiyan, Leonid Chernyak, et al.
Applied Physics Letters 112 (8) (2018)
https://doi.org/10.1063/1.5011971

Electron beam induced current profiling of ZnO p-n homojunctions

L. Chernyak, C. Schwarz, E. S. Flitsiyan, et al.
Applied Physics Letters 92 (10) 102106 (2008)
https://doi.org/10.1063/1.2896613

Electron irradiation-induced increase of minority carrier diffusion length, mobility, and lifetime in Mg-doped AlN∕AlGaN short period superlattice

O. Lopatiuk-Tirpak, L. Chernyak, B. A. Borisov, et al.
Applied Physics Letters 91 (18) 182103 (2007)
https://doi.org/10.1063/1.2805190

Cathodoluminescence studies of carrier concentration dependence for the electron-irradiation effects in p-GaN

O. Lopatiuk-Tirpak, L. Chernyak, Y. L. Wang, et al.
Applied Physics Letters 90 (17) 172111 (2007)
https://doi.org/10.1063/1.2733620

Studies of minority carrier diffusion length increase in p-type ZnO:Sb

O. Lopatiuk-Tirpak, L. Chernyak, F. X. Xiu, et al.
Journal of Applied Physics 100 (8) 086101 (2006)
https://doi.org/10.1063/1.2358844

Electron-beam-induced current and cathodoluminescence studies of thermally activated increase for carrier diffusion length and lifetime in n-type ZnO

O. Lopatiuk, L. Chernyak, A. Osinsky, J. Q. Xie and P. P. Chow
Applied Physics Letters 87 (16) 162103 (2005)
https://doi.org/10.1063/1.2106001

Influence of copper contamination on recombination activity of misfit dislocations in SiGe/Si epilayers: Temperature dependence of activity as a marker characterizing the contamination level

M. Kittler, C. Ulhaq‐Bouillet and V. Higgs
Journal of Applied Physics 78 (7) 4573 (1995)
https://doi.org/10.1063/1.359802

On the origin of EBIC defect contrast in silicon. A reflection on injection and temperature dependent investigations

M. Kittler and W. Seifert
Physica Status Solidi (a) 138 (2) 687 (1993)
https://doi.org/10.1002/pssa.2211380240