Numéro
J. Phys. IV France
Volume 137, November 2006
Page(s) 57 - 60
DOI https://doi.org/10.1051/jp4:2006137011
Publié en ligne 23 décembre 2006
35th Winter School on Wave and Quantum Acoustics
J. Bodzenta, M. Dzida and T. Pustelny
J. Phys. IV France 137 (2006) 57-60

DOI: 10.1051/jp4:2006137011

Optoelectronic monitoring of plasma discharge optimized for thin diamond film synthesis

R. Bogdanowicz, M. Gnyba and P. Wroczynski

Gdansk University of Technology, Department of Optoelectronics, Narutowicza 11/12, 80952 Gdansk, Polandrbogdan@eti.pg.gda.pl


(Published online 23 December 2006)

Abstract
We used Optical Emission Spectroscopy (OES) as a non-invasive optoelectronic tool of in-situ monitoring of plasma discharge. The low-temperature plasma, based on mixture of CH4 and H2, was produced during Microwave Plasma Assisted Chemical Vapour Deposition ($\mu
$PA CVD) synthesis process of thin diamond/DLC films. Molecular modelling showed that quality of the synthesized films is determined by total amount as well composition ratio of ions H+ and CH3+, produced in an area of Electron Cyclotrone Resonance (ECR). Therefore, dissociation of H2 molecules as well as excitation and ionization of hydrogen atoms were a subject of the presented OES studies. Developed monitoring systems uses spectrometers coupled with the reaction chamber by a dedicated optical probe and a fibre bundle. Intensity of Balmer and Paschen series were measured as a function of main CVD process parameters.



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