Numéro |
J. Phys. IV France
Volume 137, November 2006
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Page(s) | 57 - 60 | |
DOI | https://doi.org/10.1051/jp4:2006137011 | |
Publié en ligne | 23 décembre 2006 |
J. Bodzenta, M. Dzida and T. Pustelny
J. Phys. IV France 137 (2006) 57-60
DOI: 10.1051/jp4:2006137011
Optoelectronic monitoring of plasma discharge optimized for thin diamond film synthesis
R. Bogdanowicz, M. Gnyba and P. WroczynskiGdansk University of Technology, Department of Optoelectronics, Narutowicza 11/12, 80952 Gdansk, Polandrbogdan@eti.pg.gda.pl
(Published online 23 December 2006)
Abstract
We used Optical Emission Spectroscopy (OES) as a
non-invasive optoelectronic tool of in-situ monitoring of plasma discharge. The
low-temperature plasma, based on mixture of CH4 and H2, was
produced during Microwave Plasma Assisted Chemical Vapour Deposition (PA CVD) synthesis process of thin diamond/DLC films. Molecular modelling
showed that quality of the synthesized films is determined by total amount
as well composition ratio of ions H+ and CH3+, produced
in an area of Electron Cyclotrone Resonance (ECR). Therefore, dissociation
of H2 molecules as well as excitation and ionization of hydrogen atoms
were a subject of the presented OES studies. Developed monitoring systems
uses spectrometers coupled with the reaction chamber by a dedicated optical
probe and a fibre bundle. Intensity of Balmer and Paschen series were
measured as a function of main CVD process parameters.
© EDP Sciences 2006