| Numéro |
J. Phys. IV France
Volume 131, December 2005
|
|
|---|---|---|
| Page(s) | 59 - 62 | |
| DOI | https://doi.org/10.1051/jp4:2005131012 | |
| Publié en ligne | 18 janvier 2006 | |
International Workshop on Electronic Crystals
S. Brazovskii, P. Monceau and N. Kirova
J. Phys. IV France 131 (2005) 59-62
DOI: 10.1051/jp4:2005131012
1 Institute of Physics, University of Zagreb, 10001 Zagreb, Croatia
2 Experimental Physics V, University of Augsburg, 86135 Augsburg, Germany
© EDP Sciences 2005
S. Brazovskii, P. Monceau and N. Kirova
J. Phys. IV France 131 (2005) 59-62
DOI: 10.1051/jp4:2005131012
Charge ordering in quasi one-dimensional semiconductor (NbSe4)3I
D. Staresinic1, K. Biljakovic1, P. Lunkenheimer2 and A. Loidl21 Institute of Physics, University of Zagreb, 10001 Zagreb, Croatia
2 Experimental Physics V, University of Augsburg, 86135 Augsburg, Germany
Abstract
We have observed surprisingly huge dielectric response in
a nominally semiconducting quasi one-dimensional system (NbSe4)3I
below structural phase transition at 274 K. While the relaxation time shows
activated increase on cooling almost following the increase of dc
resistivity, the dielectric constant goes through a maximum at 150 K. We
discuss the results in the view of charge reordering at 274 K.
© EDP Sciences 2005