Numéro |
J. Phys. IV France
Volume 125, June 2005
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Page(s) | 395 - 398 | |
DOI | https://doi.org/10.1051/jp4:2005125092 |
J. Phys. IV France 125 (2005) 395-398
DOI: 10.1051/jp4:2005125092
Identification of efficient deposition conditions based on the determination of the effective thermal transport properties of Cu-C interface systems
S. Chotikaprakhan1, 2, D. Dietzel1, E. Neubauer3, 4, B.K. Bein1 and J. Pelzl11 Exp. Physics III, Solid State Spectroscopy, Ruhr-University, 44780 Bochum, Germany
2 Department of Physics, Faculty of Science, Kasetsart University, Bangkok 10900, Thailand
3 ARC Seibersdorf Research GmbH, Dept. Materials and Production Engineering, Austria
4 Thin Film Group, Solid State Physics, TU Wien, Austria
Abstract
For the photothermal characterization of Cu-C interface systems modulated IR radiometry has been applied. Based on two-layer model approximations, the measured effective thermal depth profiles are interpreted in the range of the intermediate modulation frequencies. The obtained thermal parameters are correlated with the mechanical adhesion strength between Cu film and C substrate, in order to identify film deposition conditions and substrate cleaning procedures contributing to good mechanical bonding and reduced thermal contact resistances.
© EDP Sciences 2005