J. Phys. IV France 125 (2005) 181-183
DOI: 10.1051/jp4:2005125042

Thermal lens and photoacoustic spectroscopy to determine the thermo-optical properties of semiconductors

N.G.C. Astrath¹, A.C. Bento¹, M.L. Baesso¹, A. Ferreira da Silva², R. Ahuja³, C. Persson⁴, S. Zhao⁵ and C.G. Granqvist<sup>5

1</sup>  Dep. de Física, Universidade Estadual de Maringá, 87020-900 Maringá, PR, Brazil
²  Instituto de Física Universidade Federal da Bahia, Campus Universitário de Ondina, 40210 340 Salvador, BA, Brazil
³  Condensad Matter Theory Group, Dep. of Physics, Uppsala University, Box 530, 751 21 Uppsala, Sweden
⁴  Dep. of Materials Science and Engineering, Royal Institute of Technology, 100 44 Stockholm, Sweden
⁵  Dep. of Materials Science, Uppsala University, Box 530, 751 21 Uppsala, Sweden

Abstract
In this work we used photoacoustic and thermal lens spectroscopy to study four different semiconductor samples: PbI₂, 4HSiC, NiCrO and NiO. The results showed that the combination of these two techniques provided the values of the band gap energies and the thermal diffusivities.

© EDP Sciences 2005