Numéro |
J. Phys. IV France
Volume 125, June 2005
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Page(s) | 169 - 171 | |
DOI | https://doi.org/10.1051/jp4:2005125039 |
J. Phys. IV France 125 (2005) 169-171
DOI: 10.1051/jp4:2005125039
Determination of thermal and optical parameters of the semiconductor CdTe by photopyroelectric spectroscopy
J.E. de Albuquerque, P.M.S. de Oliveira and S.O. FerreiraDepartamento de Física, Universidade Federal de Vicosa, 36571-000 Vicosa/MG, Brazil
Abstract
In this study, photopyroelectric spectroscopy was used to obtain thermal and optical properties of CdTe in the
nm wavelength range, where
is the wavelength. The normalized photopyroelectric intensity signal
and its phase
were independently measured, as well as the intensity Vn(f) and the phase Fn(f) (f being the chopping frequency) for a given
of the saturation part of the PPES spectrum. Equations of both the intensity and the phase of the PPES signal, taking into account the thermal and the optical characteristics of the pyroelectric (PVDF) detector, were used to fit the experimental results. From the fitting in the graph Fn(f) versus f1/2, we obtained, with great accuracy, the value of thermal diffusivity coefficient
. From the fitting in the graph Vn(f) versus f, we obtained the thermal conductivity k. The specific heat c of the sample is then directly derived from the relation
, where
is the mass density, valid for a stationary state. From the fittings in the graphs
versus
and
versus
, we obtained the optical absorption coefficient and the optical gap of the CdTe.
© EDP Sciences 2005