| Numéro |
J. Phys. IV France
Volume 117, October 2004
|
|
|---|---|---|
| Page(s) | 47 - 56 | |
| DOI | https://doi.org/10.1051/jp4:2004117008 | |
J. Phys. IV France 117 (2004) 47-56
DOI: 10.1051/jp4:2004117008
Study of optical properties of Zn
Be
Te mixed crystals
by means of combined modulated IR radiometry and photoacoustics
M. Pawlak1, 2, J. Gibkes1, J.L. Fotsing1, J. Zakrzewski2, M. Malinski3, B. K. Bein1, J. Pelzl1, F. Firszt2 and A. Marasek2
1 Exp.Physics III, Ruhr-University Bochum, 44780 Bochum, Germany
2 Nicholaus Copernicus University, 87-100 Torun, Poland
3 Technical University Koszalin, 75-328 Koszalin, Poland
Abstract
Photothermal experiments using photoacoustic, IR radiometric and piezoelectric detection have been conducted on semiconductors
and on metal samples as reference. For the metal samples the IR emissivity has been determined for differently treated surfaces
by comparing the photoacoustic and the IR radiometry response. For semiconductor mixed crystals consisting of Zn
Be
Te information on the composition dependence and depth variation of the IR optical properties has been deduced from combined
measurements based on modulated IR radiometry and photoacoustics performed as a function of modulation frequency at one selected
excitation wavelength. For the semiconductor mixed crystals, additionally, the optical absorption in the spectral range 350
nm to 900 nm has been determined.
© EDP Sciences 2004