Numéro |
J. Phys. IV France
Volume 114, April 2004
|
|
---|---|---|
Page(s) | 467 - 470 | |
DOI | https://doi.org/10.1051/jp4:2004114109 |
J. Phys. IV France 114 (2004) 467
DOI: 10.1051/jp4:2004114109
Conductivity and magnetism by band filling control of organic conductors
H. Mori1, 2, 1, M. Suto1, 3, H. Suzuki1, Y. Nishio3 and K. Kajita31 The Institute for Solid State Physics, The University of Tokyo, Kashiwa, Chiba 277-8581, Japan
2 CREST, JST
3 Department of Physics, Toho University, Funabashi, Chiba 274-8510, Japan
Abstract
Recently the systematic band-filling control has been
successfully carried out in organic conductors. The filling control to the
various ground state was investigated by doping to the antiferromagnetic
insulator for
-ET
2(MCl
4)1-x(M'Cl
4)x, the
non-magnetic insulator,
'-ET
2(MCl
4)1-x(M'Cl
4)x, the charge ordered
conductor,
-ET
3(M'Cl
4)1-x(MCl
4)x(TCE), and
the band insulator
'-ET
3(M'Cl
4)2-x(MCl
4)x
[M = Ga, Fe, M' = Co, Zn], respectively. he most drastic change was observed
for
'-ET
3(M'Cl
4)2-x(MCl
4)x: the
semiconducting behavior transforms to the metallic one from x = 0, 0.66, to
0.58. Moreover, by applying the pressure for x = 0.62, the metallic behavior
was observed down to 4 K. On the other hand, the electronic state of the
band-filled conductor with magnetic anions is also attractive. The
ferromagnetic interaction through the doped carriers was observed for
'-ET
3(CoCl
4)2-x(FeCl
4)x.
Key words. Band filling - ET salts - transport and magnetic
properties.
© EDP Sciences 2004