Numéro
J. Phys. IV France
Volume 112, October 2003
Page(s) 111 - 114
DOI https://doi.org/10.1051/jp4:2003845


J. Phys. IV France
112 (2003) 111
DOI: 10.1051/jp4:2003845

A model of martensite formation in terms of interfacial defect mechanisms

R.C. Pond1, S. Celotto1 and J.P. Hirth2

1  Materials Science and Engineering, Department of Engineering, University of Liverpool, Brownlow Hill, Liverpool L69 3BX, U.K.
2  114 Ramsey Canyon Rd., Hereford, AZ 85615, U.S.A.


Abstract
The objective of this work is to demonstrate the consistency between a new model of martensite formation and the classical theory of martensite crystallography. Recent developments in the understanding of interfacial defects have enabled their topological character, i.e. Burgers vectors and step heights, to be defined rigorously. In addition, the material flux associated with their motion along an interphase interface has also been quantified. On this basis, a defect model has been developed in which an initially strained nucleus evolves via a diffusionless process into a martensite plate. A bcc to hcp transformation is illustrated, demonstrating the crystallographic equivalence of the dislocation model and the phenomenological theory.



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