Numéro |
J. Phys. IV France
Volume 112, October 2003
|
|
---|---|---|
Page(s) | 111 - 114 | |
DOI | https://doi.org/10.1051/jp4:2003845 |
J. Phys. IV France 112 (2003) 111
DOI: 10.1051/jp4:2003845
A model of martensite formation in terms of interfacial defect mechanisms
R.C. Pond1, S. Celotto1 and J.P. Hirth21 Materials Science and Engineering, Department of Engineering, University of Liverpool, Brownlow Hill, Liverpool L69 3BX, U.K.
2 114 Ramsey Canyon Rd., Hereford, AZ 85615, U.S.A.
Abstract
The objective of this work is to demonstrate the consistency between a new model of martensite formation and the classical
theory of martensite crystallography. Recent developments in the understanding of interfacial defects have enabled their topological
character, i.e. Burgers vectors and step heights, to be defined rigorously. In addition, the material flux associated with
their motion along an interphase interface has also been quantified. On this basis, a defect model has been developed in which
an initially strained nucleus evolves via a diffusionless process into a martensite plate. A bcc to hcp transformation is
illustrated, demonstrating the crystallographic equivalence of the dislocation model and the phenomenological theory.
© EDP Sciences 2003