Numéro |
J. Phys. IV France
Volume 09, Numéro PR10, December 1999
International Workshop on Electronic CrystalsECRYS-99 |
|
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Page(s) | Pr10-33 - Pr10-35 | |
DOI | https://doi.org/10.1051/jp4:19991007 |
ECRYS-99
J. Phys. IV France 09 (1999) Pr10-33-Pr10-35
DOI: 10.1051/jp4:19991007
Pinned Wigner crystals
R. Chitra1, T. Giamarchi2 and P. Le Doussal31 Department of Physics, Rutgers University, U.S.A.
2 Laboratoire de Physique des Solides, UPS, Orsay, France
3 LPTENS, École Normale Supérieure, Paris, France
Abstract
We study the effects of weak Gaussian disorder on various physical and dynamical
properties of the pinned Wigner crystal. We use the replica based Gaussian variational method
to study the problem. The pinned crystal is the quantum analog of the Bragg glass phase
seen in vortex lattices. We obtain the full frequency dependence of the dynamical magnetoconductivities.
This allows us to extract various features of the pinning peak which can be
compared directly with experimentally measured quantities. We also calculate the magnetic
field and density dependences of these quantities. We find that the physical properties of the
crystal depend crucially on the relative magnitudes of the disorder correlation length and the
cyclotron length. This has dramatic experimental consequences. Our results are of extreme
relevance to the recent experiments on two dimensional Ga-As quantum Hall samples and Si
MOSFETS, where the insulating phase seen at low densities and/or high magnetic fields is
expected to be a pinned Wigner crystal.
© EDP Sciences 1999