| Numéro |
J. Phys. IV France
Volume 08, Numéro PR3, June 1998
Proceedings of the 3rd European Workshop on Low Temperature ElectronicsWOLTE 3 |
|
|---|---|---|
| Page(s) | Pr3-141 - Pr3-145 | |
| DOI | https://doi.org/10.1051/jp4:1998332 | |
WOLTE 3
J. Phys. IV France 08 (1998) Pr3-141-Pr3-145
DOI: 10.1051/jp4:1998332
Invited Paper
Next generation focal plane array for infrared astronomy
L.J. Kozlowski1, K. Vural1, S.A. Cabelli1, A. Chen1, D.E. Cooper1, G. Bostrup1, C. Cabelli1, K. Hodapp2, D. Hall2 and W.E. Kleinhans3 1 Rockwell Science Center, 1049 Camino dos Rios, Thousand Oaks CA 91360, U.S.A.
2 University of Hawaii, Institute for Astronomy, Honolulu, Hawaii 96822, U.S.A.
3 Valley Oak Semiconductor, Westlake Village, CA 91362, U.S.A.
Abstract
A short wavelength 2048x2048 focal plane array (FPA) with 18 µm pixel pitch is being developed for infrared astronomy. The HAWAII-2 FPA will be a hybrid comprising a HgCdTe-based detector array flip-chip bonded to a CMOS silicon multiplexer through indium interconnects. The first FPAs will have cut-off wavelength of 2.5 µm, but the readout is being designed to service detector cutoff wavelengths beyond 15 µm. The 18 µm pixel pitch was selected to accommodate both reasonable telescope optics and fabrication of the large readout (=40x40mm2) using world-class sub-micron photolithography to maximize yield of high quality devices. Defect-free multiplexer yield >5% is expected in the first lot which will be fabricated on Rockwell's commercial production line in 0,8 µm CMOS. The HgCdTe photovoltaic detector arrays will be fabricated on ≥3" diameter sapphire or silicon wafers. We also report the latest 1024x1024 FPA results with 2.5 µm HgCdTe detectors on sapphire substrates.
© EDP Sciences 1998