| Numéro |
J. Phys. IV France
Volume 7, Numéro C2, Avril 1997
Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure
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|---|---|---|
| Page(s) | C2-1207 - C2-1208 | |
| DOI | https://doi.org/10.1051/jp4:19972196 | |
Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure
J. Phys. IV France 7 (1997) C2-1207-C2-1208
DOI: 10.1051/jp4:19972196
1 C.C.L.R.C. Daresbury Laboratory, Warrington WA4 4AD, UK
2 Max-Planck-Institut für Kernphysik, 6900 Heidelberg, Germany
© EDP Sciences 1997
J. Phys. IV France 7 (1997) C2-1207-C2-1208
DOI: 10.1051/jp4:19972196
The Local Order of As Sites in Increasingly Amorphous Si
A.J. Dent1, G. Derst1, G.N. Greaves1, S. Kalbitzer2 and C. Klatt21 C.C.L.R.C. Daresbury Laboratory, Warrington WA4 4AD, UK
2 Max-Planck-Institut für Kernphysik, 6900 Heidelberg, Germany
Abstract
Our previous work has concentrated on the recrystallisation of amorphous silicon with temperature and we used XAFS to follow the local order of the dopants (typically As, Ga, etc) to see them change from essentially 3-fold in the amorphous state to 4-fold in the crystalline state. The main findings were that the silicon matrix recovers before the dopants can adjust their coordination numbers to the crystalline requirements. We present here investigations in the reverse process, namely, the progressive amorphisation of the crystalline matrix by ion bombardment. We show the progressive transformation of the dopants local structure as the matrix amorphises and show there is no delay in the structural rearrangement.
© EDP Sciences 1997