| Numéro |
J. Phys. IV France
Volume 7, Numéro C2, Avril 1997
Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure
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|---|---|---|
| Page(s) | C2-1135 - C2-1136 | |
| DOI | https://doi.org/10.1051/jp4:19972160 | |
Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure
J. Phys. IV France 7 (1997) C2-1135-C2-1136
DOI: 10.1051/jp4:19972160
1 Department of Chemistry, University of Western Ontario, London, N6A 5B7, Canada
2 Northern Telecom, P.O. Box 3511, Station C, Ottawa, K1Y 4H7, Canada
3 Brockhouse Institute for Materials Research, McMaster University, Hamilton, L8S 4M1, Canada
© EDP Sciences 1997
J. Phys. IV France 7 (1997) C2-1135-C2-1136
DOI: 10.1051/jp4:19972160
XAFS Studies of TiSi2 and CoSi2 Thin Films at the Ti, Co and Si K-Edge
I. Coulthard1, T.K. Sham1, M. Simard-Normandin2, M. Saran2 and J.D. Garrett31 Department of Chemistry, University of Western Ontario, London, N6A 5B7, Canada
2 Northern Telecom, P.O. Box 3511, Station C, Ottawa, K1Y 4H7, Canada
3 Brockhouse Institute for Materials Research, McMaster University, Hamilton, L8S 4M1, Canada
Abstract
XAFS measurements at the metal and Si K-edge have been made for a series of TiSi2 and CoSi2 blanket salicide films as well as bulk CoSi2, and TiSi2. It was found that the films have essentially the same structure as the bulk TiSi2 and CoSi2 and that the Si XANES exhibit very rich structures. Both the materials characterization and spectroscopy aspects of the XAFS are discussed.
© EDP Sciences 1997