| Numéro |
J. Phys. IV France
Volume 7, Numéro C2, Avril 1997
Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure
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|---|---|---|
| Page(s) | C2-965 - C2-969 | |
| DOI | https://doi.org/10.1051/jp4:19972104 | |
Proceedings of the 9th International Conference on X-Ray Absorption Fine Structure
J. Phys. IV France 7 (1997) C2-965-C2-969
DOI: 10.1051/jp4:19972104
Institute of Physics, Chinese Academy of Sciences, P.O. Box 603-30, Beijing 100080, China
© EDP Sciences 1997
J. Phys. IV France 7 (1997) C2-965-C2-969
DOI: 10.1051/jp4:19972104
Structural Study of GaSb, InSb Melts with XAFS Technique
Y.R. Wang, K.Q. Lu and C.X. LiInstitute of Physics, Chinese Academy of Sciences, P.O. Box 603-30, Beijing 100080, China
Abstract
The XAFS spectra of GaSb, InSb melts and the corresponding solids are measured at different temperatures. The reverse Monte Carlo simulation technique is applied to the analysis of EXAFS data of molten GaSb, InSb. The partial radial distribution functions of molten GaSb, InSb are given as well as the local atomic structure models which are based on a geometrical analysis of the model atomic configurations. A discussion about the mechanism of semiconductor-metal transition from solid to liquid is presented in the light of the local structure changes
© EDP Sciences 1997