Magnetoresistance Effect in the La1-xSrxMnO3 Ceramics

N. Ichinose; A. Nakamura

doi:doi:10.1051/jp4:19971260

Numéro		J. Phys. IV France Volume 07, Numéro C1, Mars 1997 7th INTERNATIONAL CONFERENCE ON FERRITES


Page(s)		C1-631 - C1-632
DOI		https://doi.org/10.1051/jp4:19971260

7th INTERNATIONAL CONFERENCE ON FERRITES

J. Phys. IV France 07 (1997) C1-631-C1-632
DOI: 10.1051/jp4:19971260

Magnetoresistance Effect in the La_1-xSr_xMnO₃ Ceramics

N. Ichinose and A. Nakamura

Waseda University, School of Science and Engineering, 3-4-1 Ohkubo, Shinjuku-ku, Tokyo, 169, Japan

Abstract
In this paper, we present the experimental investigation on the MR effect with particular emphasis on the ceramic processing of the La_1-xSr_xMnO₃ system. The MR ratio is defined here as Δρ/ρ(H)=(ρ(H)-ρ(0))/ρ(H) where ρ(0) is the zero field resisitance and ρ(H) the resisitivity in the applied magnetic field, e.g., H = 1000kA/m. The MR ratio is dependent on the chemical composition and firing conditions. At room temperature, the higher Δρ/ρ(H) value of ~12% has been obtained for the La_0.8Sr_0.2MnO₃ ceramics fired at 1673K. This value is comparable to higher values for the so-called "giantmagnetoresistance( GMR)"-type materials of metallic multilayer. The order of magnitude change in electrical resistivity could be useful for various magnetic and electric device applications.