Numéro
J. Phys. IV France
Volume 07, Numéro C1, Mars 1997
7th INTERNATIONAL CONFERENCE ON FERRITES
Page(s) C1-611 - C1-612
DOI https://doi.org/10.1051/jp4:19971253
7th INTERNATIONAL CONFERENCE ON FERRITES

J. Phys. IV France 07 (1997) C1-611-C1-612

DOI: 10.1051/jp4:19971253

Quality of Fe3O4 Films Prepared by Plasma Assisted MOCVD

T. Kiyomura and M. Gomi

Department of Materials Science, Japan Advanced Institute of Science and Technology, 1-1 Asahidai, Tatsunokuchi, Ishikawa 923-12, Japan


Abstract
Fe3O4 films have been grown on Si substrates by plasma-assisted MOCVD using acetylacetonate iron complex as a gas source. Relationship between the deposition rate of the film and substrate temperature indicated a possibility that part of the source molecules may be decomposed into iron-oxide molecule and an intermediate by plasma applied in a diffusion process to the substrate surface. These reaction species allowed growth of Fe3O4 films with low carbon contamination and good surface morphology at low temperature of 400°C.



© EDP Sciences 1997