| Numéro |
J. Phys. IV France
Volume 05, Numéro C7, Novembre 1995
Second International Conference on Ultra High Purity Base MetalsUHPM - 95 |
|
|---|---|---|
| Page(s) | C7-233 - C7-241 | |
| DOI | https://doi.org/10.1051/jp4:1995726 | |
Second International Conference on Ultra High Purity Base Metals
UHPM - 95
J. Phys. IV France 05 (1995) C7-233-C7-241
DOI: 10.1051/jp4:1995726
1 Max-Planck-Institut für Metallforschung and Institut für Metallkunde, Seestrasse 75, 7000 Stuttgart 1, Germany
2 Institute of Solid State Physics, Russian Academy of Sciences, 142 432 Chernogolovka, Moscow district, Russia
3 Pechiney CRV, Centre de Recherches de Voreppe, BP. 27, 38340 Voreppe, France
© EDP Sciences 1995
UHPM - 95
J. Phys. IV France 05 (1995) C7-233-C7-241
DOI: 10.1051/jp4:1995726
Grain Growth and Grain Boundary Wetting Phase Transitions in the Al-Ga and Al-Sn-Ga Alloys of High Purity
B. Straumal1, 2, S. Risser1, 3, V. Sursaeva2, B. Chenal3 and W. Gust11 Max-Planck-Institut für Metallforschung and Institut für Metallkunde, Seestrasse 75, 7000 Stuttgart 1, Germany
2 Institute of Solid State Physics, Russian Academy of Sciences, 142 432 Chernogolovka, Moscow district, Russia
3 Pechiney CRV, Centre de Recherches de Voreppe, BP. 27, 38340 Voreppe, France
Abstract
Grain growth was studied in high purity Al-Ga alloys with Ga contents of 0.001, 0.005 and 1 wt.%. The transition from normal to abnormal grain growth was investigated in dependence on Ga content and temperature. The orientations of individual grains were determined with aid of the selected area channelling method in the contact area between the abnormally growing large grains and normal matrix. The grain boundary wetting phase transitions were also studied in Al-Sn and Al-Sn-Ga alloys.
© EDP Sciences 1995