| Numéro |
J. Phys. IV France
Volume 04, Numéro C9, Novembre 1994
Proceedings of the European Symposium on Frontiers in Science and Technology with Synchrotron Radiation
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|---|---|---|
| Page(s) | C9-199 - C9-202 | |
| DOI | https://doi.org/10.1051/jp4:1994935 | |
Proceedings of the European Symposium on Frontiers in Science and Technology with Synchrotron Radiation
J. Phys. IV France 04 (1994) C9-199-C9-202
DOI: 10.1051/jp4:1994935
Department of Physics, Chalmers University of Technology, 412 96 Gothenburg, Sweden
© EDP Sciences 1994
J. Phys. IV France 04 (1994) C9-199-C9-202
DOI: 10.1051/jp4:1994935
The electronic structure of the InP(110) surface
Y. Khazmi, P.O. Nilsson and J. KanskiDepartment of Physics, Chalmers University of Technology, 412 96 Gothenburg, Sweden
Abstract
As part of an extensive project on the surface electronic structure of semiconductor compounds we report here on an experimental and theoretical study of the InP(110) surface. By comparison of angle-resolved photoemission data with results from empirical tight-binding calculations it has been possible to identify electronic surface related features and specify their origin.
© EDP Sciences 1994