J. Phys. IV France 04 (1994) C4-167-C4-169
Laser-caused modification of structure and mechanical properties of siliconV.O. PASETCHNY, V.A. MAKARA, V.M. SIZONTOV, O.V. RUDENKO and G.V. VESNA
Taras Shevchenko University, Department of Physics, Volodimirska st. 64, 252017 Kiev, Ukraine
There were investigated laser annealing conditions which cause relaxation of microtensions near in proximity to dislocation sources. It was determined that density and efficiency of such sources may be varied through oxidation of Si crystalles. Utiligation of the found conditions of thermal and laser annealing enabled the autors to set microchardness of porous Si and flexture of Si-SiO2-Si (polycrystallic) structures.
© EDP Sciences 1994