| Numéro |
J. Phys. IV France
Volume 04, Numéro C4, Avril 1994
3rd International Conference Laser M2P
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|---|---|---|
| Page(s) | C4-427 - C4-430 | |
| DOI | https://doi.org/10.1051/jp4:19944102 | |
3rd International Conference Laser M2P
J. Phys. IV France 04 (1994) C4-427-C4-430
DOI: 10.1051/jp4:19944102
1 LPCML, Université de Lyon I, URA 442 du CNRS, 69622 Villeurbanne, France
2 Subnikov Inst. Cryst., Russian Acad. Sc., Moscow 117333, Russia
© EDP Sciences 1994
J. Phys. IV France 04 (1994) C4-427-C4-430
DOI: 10.1051/jp4:19944102
Excited state absorption and gain measurements in Cr doped LiNbGeO5 and K3Nb3Si2O13 single crystals
H. MANAA1, F. DEGHOUL1, R. MONCORGE1, A.A. KAMINSKII2, A.V. BUTASHIN2 and B. MILL21 LPCML, Université de Lyon I, URA 442 du CNRS, 69622 Villeurbanne, France
2 Subnikov Inst. Cryst., Russian Acad. Sc., Moscow 117333, Russia
Without abstract
© EDP Sciences 1994
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